formation of cupric oxide films on quartz substrates by annealing the copper films
نویسندگان
چکیده
منابع مشابه
Formation of Cupric Oxide Films on Quartz Substrates by Annealing the Copper Films
In the present work, cupric oxide (CuO) films were obtained through thermal annealing of the copper (Cu) films deposited on quartz substrates by DC magnetron sputtering method. The annealing was performed in air atmosphere for different times ranging from 60-240 min at temperature of 400 ºC. The influence of annealing times on structural and morphological properties of the films was investi...
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This paper addresses the annealing temperature effect on nanostructure and phase transition of copper oxide thin films, deposited by PVD method on glass substrate (at 110 nm thickness) and post annealed at different temperatures (200-400°C) with a flow of 1 cm3s-1 Oxygen. The X-ray diffraction (XRD) was employed for crystallographic and phase analyses, while atomic force m...
متن کاملThermal Oxidation Times Effect on Structural and Morphological Properties of Molybdenum Oxide Thin Films Grown on Quartz Substrates
Molybdenum oxide (α-MoO)thin films were prepared on quartz and silicon substrates by thermal oxidation of Mo thin films deposited using DC magnetron sputtering method. The influence of thermal oxidation times ranging from 60-240 min on the structural and morphological properties of the preparedfilms was investigated using X-ray diffraction, Atomic force microscopy and Fourier transform infrared...
متن کاملAnnealing temperature effect on nanostructure and phase transition of Copper Oxide thin films
This paper addresses the annealing temperature effect on nanostructure and phase transition of copper oxide thin films, deposited by PVD method on glass substrate (at 110 nm thickness) and post annealed at different temperatures (200-400°C) with a flow of 1 cm3s-1 Oxygen. The X-ray diffraction (XRD) was employed for crystallographic and phase analyses, while atomic force m...
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Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
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عنوان ژورنال:
quarterly journal of applied chemical researchناشر: islamic azad university, karaj branch
ISSN 2008-3815
دوره 9
شماره 2 2015
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